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| SUD45P03-15A New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.015 @ VGS = -10 V 0.024 @ VGS = -4.5 V ID (A)a -15 -12 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range w w .D w t a S a e h VDS VGS ID IDM IS t e D U 4 .c m o P-Channel MOSFET Symbol Limit -30 "20 -15 -10 Unit V TA = 25_C TA = 100_C A -100 -15 70c PD TJ, Tstg 7b -55 to 150 W _C TC = 25_C TA = 25_C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 71123 S-00045--Rev. A, 24-Jan-00 t v 10 sec Steady State Symbol RthJA RthJC Typical 14 40 1.5 Maximum w w w .D a aS t 18 50 1.8 ee h 4U t Unit _C/W om .c www.vishay.com S FaxBack 408-970-5600 2-1 SUD45P03-15A Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = -20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 125_C VDS = -5 V, VGS = -10 V VDS = -5 V, VGS = -4.5 V VGS = -10 V, ID = -15 A Drain-Source On-State Resistanceb DiS OS Ri rDS(on) VGS = -10 V, ID = -15 A, TJ = 125_C VGS = -4.5 V, ID = -12 A Forward Transconductanceb gfs VDS = -15 V, ID = -15 A 20 -50 A -20 0.012 0.018 0.020 0.015 0.026 0.024 S W -30 V -1.0 -100 -1 -50 nA mA Symbol Test Condition Min Typa Max Unit On-State Drain Currentb ID(on) Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = -15 V, RL = 0 33 W 15 V, 0.33 ID ^ -45 A, VGEN = -10 V RG = 2 4 W 45 A 10 V, 2.4 VDS = -15 V VGS = -10 V ID = -45 A 15 V, 10 V, 45 VGS = 0 V, VDS = -25 V, f = 1 MHz 3600 600 340 60 14 12 13 370 50 75 20 520 ns 100 120 125 nC C pF F Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb ISM VSD trr IF = -45 A, VGS = 0 V IF = -45 A, di/dt = 100 A/ms 1.2 55 100 1.5 100 A V ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71123 S-00045--Rev. A, 24-Jan-00 SUD45P03-15A New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 6 V 80 5V I D - Drain Current (A) 60 5V 40 4V I D - Drain Current (A) 60 125_C 80 100 TC = -55_C 25_C Vishay Siliconix Transfer Characteristics 40 20 3V 0 0 2 4 6 8 10 20 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 50 TC = -55_C 25_C 40 125_C 30 r DS(on)- On-Resistance ( W ) g fs - Transconductance (S) 0.04 0.05 On-Resistance vs. Drain Current 0.03 VGS = 4.5 V 20 0.02 VGS = 10 V 0.01 10 0 0 10 20 30 40 50 60 0 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 5000 10 Gate Charge 4000 C - Capacitance (pF) Ciss V GS - Gate-to-Source Voltage (V) 8 VDS = 15 V ID = 45 A 3000 6 2000 Coss 1000 Crss 0 0 5 10 15 20 25 30 4 2 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71123 S-00045--Rev. A, 24-Jan-00 www.vishay.com S FaxBack 408-970-5600 2-3 SUD45P03-15A Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 15 A r DS(on)- On-Resistance ( W ) (Normalized) 1.6 I S - Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.2 0.8 0.4 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 20 1000 Safe Operating Area 16 I D - Drain Current (A) I D - Drain Current (A) 100 Limited by rDS(on) 10 10, 100 ms 12 1 ms 10 ms 8 1 100 ms 1s dc 4 0.1 TA = 25_C Single Pulse 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 TA - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 71123 S-00045--Rev. A, 24-Jan-00 2-4 |
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